Microsemi Continues Its Leadership in Silicon Carbide Solutions by Launching Innovative New Family of SiC MOSFETs for High-voltage Industrial Applications
New SiC MOSFETs Complemented with SiC Power Modules, Significantly Improving System Efficiency in High-voltage Applications and Delivering Maximum Power Efficiency to Help Customers Develop Lighter, Smaller, More Reliable System Designs
ALISO VIEJO, Calif.—May 20, 2014—Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today introduced its new silicon carbide (SiC) MOSFET product family with new 1200 volt (V) solutions. The innovative new SiC MOSFETs are designed for high-power industrial applications where efficiency is critical. These applications include solutions for solar inverters, electric vehicles, welding and medical devices.
Microsemi is well positioned to capitalize on SiC semiconductor market growth. Market researcher Yole Développement estimates that the SiC power semiconductor market will grow 39 percent year-over-year from 2015 to 2020, and Market Research estimates the SiC semiconductor market will grow 38 percent year-over-year to $5.3 billion by 2022.
New SiC MOSFETs
The new SiC MOSFETs provide patented technology from Microsemi and are designed to help customers develop solutions that operate at higher frequency and improve system efficiency.
Microsemi's patented SiC MOSFET technology features include:
- Best-in-class RDS(on) vs. temperature
- Ultra-low gate resistance for minimizing switching energy loss
- Superior maximum switching frequency
- Outstanding ruggedness with superior short circuit withstand
“Microsemi's 1200V SiC MOSFETs are establishing a new benchmark for performance,” said Marc Vandenberg, general manager for Microsemi’s Power Products Group. “Microsemi continues to expand its SiC product portfolio by capitalizing on our in-house SiC fabrication capabilities and delivering innovative high-power solutions to our customers.”